Controlling heterojunction abruptness in VLS-grown semiconductor nanowires via in situ catalyst alloying

Nano Letters

Volumn 11, Issue 8, 2011, Pages 3117-3122

  Perea, Daniel E ^a   Li, Nan ^a   Dickerson, Robert M ^a   Misra, Amit ^a   Picraux, S T ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

alloy catalyst; axial heterojunction; in situ alloying; interface abruptness; Si and Ge nanowires; VLS growth

Indexed keywords

ALLOY CATALYST; AXIAL HETEROJUNCTION; IN SITU ALLOYING; SI AND GE NANOWIRES; VLS GROWTH;

ALLOYING; CATALYSTS; CERIUM ALLOYS; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GERMANIUM; HETEROJUNCTIONS; LIQUIDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON; SILICON ALLOYS; SOLUBILITY;

NANOWIRES;

EID: 80051642417     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201124y     Document Type: Article

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