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Volumn 25, Issue 5, 2004, Pages 308-310

Optimization of RF linearity in DG-MOSFETs

Author keywords

Distortion; Intermodulation; MOSFETs; Semiconductor device modeling; Silicon on insulator (SOI)

Indexed keywords

COMPUTER SIMULATION; INTERMODULATION; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

EID: 2442488943     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826539     Document Type: Letter
Times cited : (80)

References (9)
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    • J. G. Fossum, L. Ge, and M.-H. Chiang, "Speed superiority of scaled double-gate CMOS," IEEE Trans. Electron Devices, vol. 45, pp. 808-811, May 2002.
    • (2002) IEEE Trans. Electron Devices , vol.45 , pp. 808-811
    • Fossum, J.G.1    Ge, L.2    Chiang, M.-H.3
  • 2
    • 0035423685 scopus 로고    scopus 로고
    • RF-CMOS performance trends
    • Aug.
    • P. H. Woerlee et al., "RF-CMOS performance trends," IEEE Trans. Electron Devices, vol. 48, pp. 1776-1778, Aug. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 1776-1778
    • Woerlee, P.H.1
  • 3
    • 0141940281 scopus 로고    scopus 로고
    • A physical compact model of DG-MOSFET for mixed-signal circuit applications: Part I and II
    • Oct.
    • G. Pei et al., "A physical compact model of DG-MOSFET for mixed-signal circuit applications: part I and II," IEEE Trans. Electron Devices, vol. 50, pp. 2135-2153, Oct. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.50 , pp. 2135-2153
    • Pei, G.1
  • 5
    • 0037361403 scopus 로고    scopus 로고
    • Linearity analysis of CMOS for RF application
    • Aug.
    • S. Kang, B. Choi, and B. Kim, "Linearity analysis of CMOS for RF application," IEEE Trans. Electron Devices, vol. 3, pp. 972-977, Aug. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.3 , pp. 972-977
    • Kang, S.1    Choi, B.2    Kim, B.3
  • 7
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    • TCAD Suite
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  • 8
    • 0035250378 scopus 로고    scopus 로고
    • Double-gate CMOS: Symmetrical- versus asymmetrical-gate devices
    • Feb.
    • K. Kim and J. G. Fossum, "Double-gate CMOS: symmetrical- versus asymmetrical-gate devices," IEEE Trans. Electron Devices, vol. 48, pp. 294-299, Feb. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 294-299
    • Kim, K.1    Fossum, J.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.