A new method to achieve RF linearity in SOI nanowire MOSFETs

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2011, Pages

  Razavieh, Ali ^a   Singh, Navab ^b   Paul, Abhijeet ^a   Klimeck, Gerhard ^a   Janes, David ^a   Appenzeller, Joerg ^a  

^a PURDUE UNIVERSITY   (United States)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

1 D Transport; Ballistic Transport; Linearity; Nanowire Transistor; Quantum Capacitance; RF CMOS; Transconductance

Indexed keywords

1-D TRANSPORT; BALLISTIC TRANSPORT; LINEARITY; NANOWIRE TRANSISTOR; QUANTUM CAPACITANCE; RF-CMOS;

BALLISTICS; CAPACITANCE; COMMUNICATION SYSTEMS; DIGITAL INTEGRATED CIRCUITS; NANOWIRES; RADIO; RADIO BROADCASTING; RADIO WAVES; TRANSCONDUCTANCE; TRANSPORT PROPERTIES;

QUANTUM CHEMISTRY;

EID: 79960803423     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2011.5940626     Document Type: Conference Paper

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