Improved linearity performance of AlGaN/GaN MISHFET over conventional HFETs: An optimization study for wireless infrastructure applications

Superlattices and Microstructures

Volumn 50, Issue 1, 2011, Pages 1-13

  Aggarwal, Ruchika ^a   Agrawal, Anju ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

AlGaN GaN MISHFET; Distortion; Higher order transconductance; Input intercept power; Intermodulation distortion; Linearity

Indexed keywords

ALGAN/GAN MISHFET; CRITICAL TECHNOLOGIES; DOPING DENSITIES; FIGURES OF MERITS; GATE INSULATOR; GATE LENGTH; HIGHER ORDER; HIGHER ORDER HARMONICS; HIGHER ORDER TERMS; INPUT INTERCEPT POWER; INSULATED GATE; LAYER THICKNESS; LINEARITY; LOW-NOISE APPLICATIONS; MIS-HFET; OPTIMIZATION STUDIES; RF WIRELESS; SMALL SIGNAL; TAYLOR SERIES EXPANSIONS; TECHNOLOGY PARAMETERS; WIRELESS INFRASTRUCTURES;

DISTORTION (WAVES); DRAIN CURRENT; INTERMODULATION; INTERMODULATION DISTORTION; INTERMODULATION MEASUREMENT; OPTIMIZATION; TAYLOR SERIES; TRANSCONDUCTANCE;

GALLIUM NITRIDE;

EID: 79958849168     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2011.03.009     Document Type: Article

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