Study of RF Linearity in sub-50 nm MOSFETs Using Simulations

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 347-352

  Ma, Wei ^a   Kaya, Savas ^a   Asenov, Asen ^b  

^a US Institute of Navigation   (United States)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

device simulations; inter modulation; linearity; MOSFET; RF CMOS

Indexed keywords

DISPLAY DEVICES; QUANTUM CHEMISTRY; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY;

DEVICE SIMULATIONS; INTER MODULATIONS; LINEARITY; MOS-FET; RF-CMOS;

MOSFET DEVICES;

EID: 79959466641     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011450.37111.9d     Document Type: Article

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