Inherent linearity in carbon nanotube field-effect transistors

Applied Physics Letters

Volumn 91, Issue 5, 2007, Pages

  Baumgardner, James E ^a   Pesetski, Aaron A ^a   Murduck, James M ^a   Przybysz, John X ^a   Adam, John D ^a   Zhang, Hong ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CONDITIONS; CHANNEL CAPACITANCE; ELECTROSTATIC GATE-CHANNEL CAPACITANCE;

CAPACITANCE; CHANNEL CAPACITY; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; LINEARIZATION; RADIO FREQUENCY AMPLIFIERS;

CARBON NANOTUBES;

EID: 34547676082     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2760159     Document Type: Article

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