Impact of device physics on DG and SOI MOSFET linearity

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1741-1746

  Ma, Wei ^a   Kaya, Savas ^a  

^a US Institute of Navigation   (United States)

Author keywords

Device simulations; Double gate MOSFETs; Inter modulation; Linearity; MOSFET; RF CMOS; Self heating; SOI

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; HYDRODYNAMICS; IMPACT IONIZATION; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; TRANSPORT PROPERTIES;

DEVICE SIMULATIONS; INTER-MODULATION; SELF-HEATING;

MOSFET DEVICES;

EID: 3142741914     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.008     Document Type: Conference Paper

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