Surface modification of porous silicon-based films using dichlorosilanes dissolved in supercritical carbon dioxide

Industrial and Engineering Chemistry Research

Volumn 52, Issue 13, 2013, Pages 4762-4771

  Vyhmeister, Eduardo ^a   Valdés González, Héctor ^a   Muscat, Anthony J ^b   Suleiman, David ^c   Estévez, L Antonio ^c  

^a UNIVERSIDAD ANDRÉS BELLO   (Chile)

^b University of Arizona   (United States)

^c UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION LEVELS; DIETHYLDICHLOROSILANE; DIMETHYLDICHLOROSILANE; ELECTRICAL MEASUREMENT; INTERMOLECULAR REACTIONS; METHYLSILSESQUIOXANE; SILYLATION REACTION; SUPERCRITICAL CARBON DIOXIDES;

BATCH REACTORS; CARBON DIOXIDE; CHLORINE COMPOUNDS; CONTACT ANGLE; DEPOSITS; DISSOLUTION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GONIOMETERS; HYDROGEN BONDS; POROUS SILICON; SUPERCRITICAL FLUID EXTRACTION;

SURFACE REACTIONS;

EID: 84875764173     PISSN: 08885885     EISSN: 15205045     Source Type: Journal    
DOI: 10.1021/ie302686e     Document Type: Article

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