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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1334-1338

Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment

(11) Mor, Y S a Chang, T C b Liu, P T c Tsai, T M a Chen, C W a Yan, S T a Chu, C J d Wu, W F c Pan, F M c Lur, Water e Sze, S M a,c

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL NANO DEVICE LABORATORIES (Taiwan)

d Nanmat Technology Co Ltd (Taiwan)

e UNITED MICROELECTRONICS CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CURRENT DENSITY; DIELECTRIC MATERIALS; GLASS; HYDROPHILICITY; MOISTURE; OXIDATION; OXYGEN; PERMITTIVITY; PLASMAS; POROUS MATERIALS; VAPORS;

ELECTRICAL DEGRADATION; HEXAMETHYLDISILAZANE TREATMENT; METHYL GROUPS; MOISTURE UPTAKE; OXYGEN PLASMA ASHING; POROUS ORGANOSILICATE GLASS; ULTRA LOW PERMITTIVITY DIELECTRIC MATERIAL;

SILICATES;

EID: 0035982532 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1488645 Document Type: Conference Paper

Times cited : (91)

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