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Volumn 479, Issue 1-2, 2005, Pages 137-143

Preparation and characterization of low pressure chemically vapor deposited silicon nitride thin films from tris(diethylamino)chlorosilane and ammonia

Author keywords

Characterization; Liquid precursor; Low pressure chemical vapor deposition; Silicon nitride

Indexed keywords

AMMONIA; CARBON; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; SILICON NITRIDE;

EID: 15344340455     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.201     Document Type: Article
Times cited : (6)

References (26)
  • 9
    • 0003679027 scopus 로고
    • McGraw-Hill Book New York
    • S.M. Sze VLSI technology 1988 McGraw-Hill Book New York 268
    • (1988) VLSI Technology , pp. 268
    • Sze, S.M.1
  • 16
    • 0013497406 scopus 로고
    • Experimental organometallic chemistry
    • A.L. Wayda M.Y. Darensbourg American Chemical Society Washington, DC
    • B.J. Burger, and J.E. Bercaw A.L. Wayda M.Y. Darensbourg Experimental organometallic chemistry ACS Symposium Series vol. 357 1987 American Chemical Society Washington, DC
    • (1987) ACS Symposium Series , vol.357
    • Burger, B.J.1    Bercaw, J.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.