Surface properties restoration and passivation of high porosity ultra low-k dielectric (k ∼ 2.3) after direct-CMP

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2620-2623

  Sinapi, F ^a   Heylen, N ^a   Travaly, Y ^a   Vereecke, G ^a   Baklanov, M ^a   Kesters, E ^a   Van Hoeymissen, J ^a   Hernandez J L ^a   Beyer, G ^a   Fischer, P ^b  

^a IMEC   (Belgium)

^b INTEL CORPORATION   (United States)

Author keywords

Hydrophobicity; k value; Post CMP; Silylation; ULK

Indexed keywords

ANNEALING; DEGRADATION; HYDROPHOBICITY; PASSIVATION; POROSITY; RESTORATION;

HYDROPHOBIC METHYL FUNCTIONS; POST-CMP CLEANING PROCESS; SURFACE HYDROPHILISATION; ULTRA LOW-K DIELECTRIC;

DIELECTRIC MATERIALS;

EID: 34548862574     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.053     Document Type: Article

References (4)

1. H. Struyf et al., in: International Interconnect Technology Conference 2005 (IITC 2005), pp. 30-32.
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3. N. Heylen et al., in: S.W. Russell, M.E. Mills, A. Osaki, T. Yoda (Eds.), Advance Metallization Conference 2006 (AMC/ADMETA 2006), MRS, Warrendale PA, 2006, pp. 549-556.
4. Peter Fairbank R.W., et al. Journal of Chromatography A 830 (1999) 285-291