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Volumn 102, Issue 11, 2013, Pages

Low resistance GaN/InGaN/GaN tunnel junctions

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN METHODOLOGY; ENERGY-BAND DIAGRAM; LOW TEMPERATURES; OPTOELECTRONICS DEVICES; POLARIZATION FIELD; SPECIFIC RESISTIVITIES; TUNNEL INJECTION; TUNNELING BARRIER;

EID: 84875701859     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4796041     Document Type: Article
Times cited : (117)

References (32)
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    • (1958) Phys. Rev. , vol.109 , pp. 603
    • Esaki, L.1
  • 12
    • 84875710203 scopus 로고    scopus 로고
    • M. J. Grundmann, Ph.D. dissertation, University of California, Santa Barbara, 2007
    • M. J. Grundmann, Ph.D. dissertation, University of California, Santa Barbara, 2007.
  • 19
    • 50549156338 scopus 로고
    • 10.1016/0022-3697(60)90035-4
    • E. O. Kane, J. Phys. Chem. Solids 12, 181 (1960). 10.1016/0022-3697(60) 90035-4
    • (1960) J. Phys. Chem. Solids , vol.12 , pp. 181
    • Kane, E.O.1
  • 31
    • 84875744329 scopus 로고    scopus 로고
    • S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. Myers, and S. Rajan, e-print arXiv:1206.3810
    • S. Krishnamoorthy, T. F. Kent, J. Yang, P. S. Park, R. Myers, and S. Rajan, e-print arXiv:1206.3810.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.