Methods for attaining high interband tunneling current in III-Nitrides

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2012, Pages 163-164

  Growden, Tyler A ^a   Krishnamoorthy, Sriram ^a   Nath, Digbijoy N ^a   Ramesh, Anisha ^a   Rajan, Siddharth ^a   Berger, Paul R ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DOPING; ELEVATED TEMPERATURE; HIGH CONCENTRATION; HIGH CURRENT DENSITIES; HIGH POWER; III-NITRIDE; III-NITRIDES; INTERBAND; INTERBAND TUNNELING; MULTI JUNCTION SOLAR CELLS; PHOTOVOLTAICS; PIEZOELECTRIC POLARIZATIONS; RESONANT INTERBAND TUNNELING DIODES; TUNNELING DEVICE; TUNNELING PROBABILITIES;

ENERGY GAP; GALLIUM NITRIDE; PHOTOVOLTAIC CELLS; TUNNEL DIODES;

TUNNEL JUNCTIONS;

EID: 84866904115     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2012.6257036     Document Type: Conference Paper

References (2)

1. A. Chini, Y. Fu, S. Rajan, J. Speck, and U.K. Mishra, "An experimental method to identify bulk and surface traps in GaN HEMTs," in Int. Symp.on Cmpd. Semi. (ISCS), 2005.
2. S. Krishnamoorthy, P.S. Park, S. Rajan, "D emonstration of forward inter-band tunneling in GaN by polarization engineering," Appl. Phys. Lett., vol. 99, no. 23, Dec. 2011.