Tunnel junctions in GaN/AlN for optoelectronic applications

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 23-24

  Grundmann, Michael J ^a   Speck, James S ^b   Mishra, Umesh K ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING;

DIPOLE MOMENT; MULTIPLE ACTIVE REGION (MAR); P-TYPE MATERIALS; TURN-ON VOLTAGE;

TUNNEL JUNCTIONS;

EID: 33751346063     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553039     Document Type: Conference Paper

References (2)

1. S.-R. Jeon. et al. Appl. Phys. Letters. Vol. 80, p. 1933 (2002)
2. T. Takeuchi. et al. Jpn. J. Appl. Phys. Vol. 40, p. L861 (2001)