Double quantum-well tunnel junctions with high peak tunnel currents and low absorption for InP multi-junction solar cells

Applied Physics Letters

Volumn 100, Issue 21, 2012, Pages

  Lumb, Matthew P ^a,b   Yakes, Michael K ^b   González, María ^b,c   Vurgaftman, Igor ^b   Bailey, Christopher G ^b   Hoheisel, Raymond ^a,b   Walters, Robert J ^b  

^a GEORGE WASHINGTON UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c SOTERA DEFENSE SOLUTIONS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM CELLS; DIFFERENTIAL RESISTANCES; DOUBLE QUANTUM-WELL; IMPROVING PERFORMANCE; INALGAAS; INGAAS QUANTUM WELLS; INP; LATTICE-MATCHED; MULTI JUNCTION SOLAR CELLS; NETWORK SIMULATION; QUANTUM WELL DEVICE; TRANSMISSION LOSS; TRIPLE JUNCTION SOLAR CELLS; TUNNEL CURRENTS;

COMPUTER SIMULATION; TUNNEL JUNCTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84861798556     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4722890     Document Type: Article

References (14)

1. L. Esaki, Phys. Rev. 109 (2), 603 (1958). 10.1103/PhysRev.109.603
2. F. Dimroth, Phys. Status Solidi C 3, 373 (2006). 10.1002/pssc.200564172
3. M. Yamaguchi, Sol. Energy Mater. Sol. Cells 75 (1-2), 261 (2003). 10.1016/S0927-0248(02)00168-X
4. M. Yamaguchi, K.-I. Nishimura, T. Sasaki, H. Suzuki, K. Arafune, N. Kojima, Y. Ohsita, Y. Okada, A. Yamamoto, T. Takamoto, and K. Araki, Sol. Energy 82 (2), 173 (2008). 10.1016/j.solener.2007.06.011
5. J. F. Wheeldon, C. E. Valdivia, A. W. Walker, G. Kolhatkar, A. Jaouad, A. Turala, B. Riel, D. Masson, N. Puetz, S. Fafard, R. Arès, V. Aimez, T. J. Hall, and K. Hinzer, Prog. Photovoltaics 19 (4), 442 (2011). 10.1002/pip.1056
6. M. S. Leite, R. L. Woo, W. D. Hong, D. C. Law, and H. A. Atwater, Appl. Phys. Lett. 98 (9), 093502 (2011). 10.1063/1.3531756
7. M. González, N. Chan, N. J. Ekins-Daukes, J. G. J. Adams, P. Stavrinou, I. Vurgaftman, J. R. Meyer, J. Abell, R. J. Walters, C. D. Cress, and P. P. Jenkins, in Proceedings of SPIE, Physics and Simulation of Optoelectronic Devices XIX, San Francisco, edited by, B. Witzigmann, F. Henneberger, Y. Arakawa, and, A. Freundlich, (SPIE, 2011).
8. S. Sutar, Q. Zhang, and A. Seabaugh, IEEE Trans. Electron Devices 57 (10), 2587 (2010). 10.1109/TED.2010.2059611
9. H. H. Tsai, Y. K. Su, H. H. Lin, R. L. Wang, and T. L. Lee, IEEE Electron Device Lett. 15 (9), 357 (1994). 10.1109/55.311133
10. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89 (11), 5815 (2001). 10.1063/1.1368156
11. G. M. Cohen, D. Ritter, and C. Cytermann, Electron. Lett. 31 (17), 1511 (1995). 10.1049/el:19950979
12. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, Phys. Rev. B. 32 (2), 1043 (1985). 10.1103/PhysRevB.32.1043
13. J. Singh, Electronic and Optoelectronic Properties of Semiconductor Structures (Cambridge University Press, Cambridge, 2003).
14. M. Steiner, W. Guter, G. Peharz, S. P. Philipps, F. Dimroth, and A. W. Bett, Prog. Photovoltaics 20 (3), 274 (2011). 10.1002/pip.1133