Demonstration of forward inter-band tunneling in GaN by polarization engineering

Applied Physics Letters

Volumn 99, Issue 23, 2011, Pages

  Krishnamoorthy, Sriram ^a   Park, Pil Sung ^a   Rajan, Siddharth ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DRIVES; CURRENT RATIOS; FORWARD CURRENTS; HETEROJUNCTION DIODES; III-NITRIDE; INTERBAND; MULTI JUNCTION SOLAR CELLS; NEGATIVE DIFFERENTIAL RESISTANCES; PEAK CURRENTS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; TUNNELING CHARACTERISTICS; TUNNELING CURRENT;

GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; POLARIZATION; SEMICONDUCTOR DIODES; TUNNEL JUNCTIONS;

TUNNELS;

EID: 83455179547     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3666862     Document Type: Article

References (19)

1. L. Esaki, Phys. Rev. 109, 603 (1958). 10.1103/PhysRev.109.603
2. R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, Appl. Phys. Lett. 90, 183516 (2007). 10.1063/1.2734507 (Pubitemid 46701234)
3. N. Jin, S. Y. Chung, A. T. Rice, P. R. Berger, R. Yu, P. E. Thompson, and R. Lake, Appl. Phys. Lett. 83, 3308 (2003). 10.1063/1.1618927
4. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997). 10.1103/PhysRevB.56.R10024
5. C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, J. Appl. Phys. 85, 3786 (1999). 10.1063/1.369749
6. M. J. Grundmann, Ph.D. dissertation (University of California, Santa Barbara, 2007).
7. M. J. Grundmann and U. K. Mishra, Phys. Stat. Sol. (c) 4, 2830 (2007). 10.1002/pssc.v4:7
8. J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay, and D. Jena, Phys. Rev. Lett. 103, 026801 (2009). 10.1103/PhysRevLett.103.026801
9. M. F. Shubert, Phys. Rev. B 81, 035303 (2010). 10.1103/PhysRevB.81.035303
10. S. Krishnamoorthy, D. Nath, F. Akyol, P. S. Park, M. Esposto, and S. Rajan, Appl. Phys. Lett. 97, 203502 (2010). 10.1063/1.3517481
11. I. Vurgaftman and J. R. Meyer, in Nitride Semiconductor Devices: Principles and Simulation, edited by, J. Piprek, (Wiley, Weinheim, 2007), pp. 13-48.
12. M. J. Grundmann, BandEng Software, University of California, Santa Barbara (http://my.ece.ucsb.edu/mgrundmann/bandeng.htm).
13. Saint Gobain Crystals, Vallarius, France (http://www.photonic.saint- gobain.com/GaN-Free-Standing.aspx).
14. D. N. Nath, E. Gr, S. A. Ringel, and S. Rajan, Appl. Phys. Lett. 97, 071903 (2010). 10.1063/1.3478226
15. D. N. Nath, E. Gr, S. A. Ringel, and S. Rajan, J. Vac. Sci. Tech. B 29 (2), 021206 (2011). 10.1116/1.3562277
16. S. Rajan, A. Chini, M. H. Wong, J. S. Speck, and U. K. Mishra, J. Appl. Phys. 102, 044501 (2007). 10.1063/1.2769950 (Pubitemid 47352472)
17. N. Akopian, A. Vardi, G. Bahir, V. Garber, E. Ehrenfreund, D. Gershoni, C. Poblenz, C. R. Elsass, I. P. Smorchkova, and J. S. Speck, Appl. Phys. Lett. 94, 223502 (2009). 10.1063/1.3147869
18. A. E. Belyaev, C. T. Foxon, S. V. Novikov, O. Makarovsky, and L. Eaves, Appl. Phys. Lett. 83, 3626 (2003). 10.1063/1.1622987
19. C. Bayram, Z. Vashaei, and M. Razeghi, Appl. Phys. Lett. 97, 181109 (2010). 10.1063/1.3515418