Low resistance tunnel junctions with type-II heterostructures

Applied Physics Letters

Volumn 88, Issue 23, 2006, Pages

  Suzuki, N ^a   Anan, T ^a   Hatakeyama, H ^a   Tsuji, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; HETEROJUNCTIONS; LASERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

C-DOPED GAASSB; GAAS SUBSTRATES; TYPE-II TUNNEL JUNCTION; VERTICAL-CAVITY SURFACE-EMITTING LASERS;

TUNNEL JUNCTIONS;

EID: 33745036956     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2210082     Document Type: Article

References (10)

1. D. J. Bossert, D. Collins, I. Aeby, J. B. Clevenger, C. Helms, W. Luo, C. X. Wang, and H. Q. Hou, Proc. SPIE 4649, 142 (2002).
2. N. Yokouchi, N. Iwai, and A. Kasukawa, Proc. SPIE 4994, 189 (2003).
3. S. Eitel, S. Hunziker, D. Vez, M. Moser, R. Hoewel, H.-P. Gauggel, M. Brunner, and K. Gulden, Proc. SPIE 4649, 183 (2002).
4. M. Ortsiefer, R. Shau, F. Mederer, R. Michalzik, J. Rosskopf, G. Bohm, F. Kohler, C. Lauer, M. Maute, and M.-C. Amann, Electron. Lett. 38, 1180 (2002).
5. N. Nishiyama, C. Caneau, G. Guryanov, X. S. Liu, M. Hu, and C. E. Zah, Electron. Lett. 39, 437 (2003).
6. D. E. Mars, Y.-L. Chang, M. H. Leary, S. D. Roh, and D. R. Chamberlin, Appl. Phys. Lett. 84, 2560 (2004).
7. T. Knodl, R. Jager, M. Grabherr, R. King, M. Kicherer, M. Miller, F. Mederer, and K. J. Ebeling, in Proc. LEOS Annu. Meeting 1999, Vol. 1, pp. 143-144.
8. J. Ch. Garcia, E. Rosencher, Ph. Collot, N. Laurent, J. L. Guyaux, J. Nagle, and E. Chirlias, J. Cryst. Growth 201/202, 891 (1999).
9. K. Uesugi, I. Suemune, H. Machida, and N. Shimoyama, Appl. Phys. Lett. 82, 898 (2003).
10. K. M. Yu, W. Walukiewicz, W. Shan, J. W. Ager III, J. Wu, E. E. Haller, J. F. Geisz, D. J. Friedman, and J. M. Olson, Phys. Rev. B 61, R13337 (2000).