Efficient III-V tunneling diodes with ErAs recombination centers

Semiconductor Science and Technology

Volumn 25, Issue 11, 2010, Pages

  Preu, S ^a   Malzer, S ^a   Dohler G H ^a   Lu, H ^b   Gossard, A C ^b   Wang, L J ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DEPLETION REGION; DEVICE RESISTANCE; DOPING LEVELS; ELECTRONS AND HOLES; GAAS; KEY PARAMETERS; LOW BAND GAP; LOW BIAS; MATERIAL SYSTEMS; METALLIC STATE; MONOLAYER DEPOSITION; ORDERS OF MAGNITUDE; RECOMBINATION CENTERS; RECOMBINATION CURRENTS; REVERSE BIAS; THEORETICAL MODELS; TUNNEL BARRIER; TUNNELING CURRENT; TUNNELING DIODES;

ALUMINUM; DIODES; DOPING (ADDITIVES); ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; MONOLAYERS; SEMICONDUCTING GALLIUM; TUNNEL DIODES;

SEMICONDUCTOR DIODES;

EID: 78649980491     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/11/115004     Document Type: Article

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