GaN-based light emitting diodes with tunnel junctions

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 8 B, 2001, Pages

  Takeuchi, Tetsuya ^a   Hasnain, Ghulam ^a   Corzine, Scott ^a   Hueschen, Mark ^a   Schneider Jr , Richard P ^a   Kocot, Chris ^a   Blomqvist, Mats ^a   Chang, Ying Lan ^a   Lefforge, Dale ^a   Krames, Mike R ^b   Cook, Lou W ^b   Stockman, Steve A ^b  

^a AGILENT TECHNOLOGIES   (United States)

^b Philips Lumileds Lighting Company   (United States)

Author keywords

Hole injection; LED; Mg doped InGaN; Si doped GaN; Tunnel junction; VCSEL

Indexed keywords

CLADDING (COATING); ELECTRIC POTENTIAL; ELECTRODES; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; TUNNEL JUNCTIONS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

LIGHT EMITTING DIODES;

EID: 0035880346     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l861     Document Type: Article

References (19)