GaN-based light-emitting diodes using tunnel junctions

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 739-743

  Jeon, Seong Ran ^b   Cho, Myong Soo ^b   Yu, Min A ^b   Yang, Gye Mo ^a,b  

^a Chonbuk National University ^*

^b Chonbuk National University   (South Korea)

Author keywords

Current aperture; GaN based tunnel junction; Lateral current spreading; LEDs; VCSELs

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; LUMINESCENCE OF SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; TUNNEL JUNCTIONS;

RADIATIVE EFFICIENCY; VERTICAL CAVITY SURFACE EMITTING LASERS;

LIGHT EMITTING DIODES;

EID: 0036662204     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.800847     Document Type: Article

References (14)

1. S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys., vol. 35, no. 1B, pp. L74-L76, 1996.
2. S. Nakamura and G. Fasol, The Blue Laser Diodes. Berlin, Germany: Springer, 1997.
3. I. Akasaki and H. Amano, "Crystal growth and conductivity control of group III nitride semiconductors and their application to short wave-length light emitter," Jpn. J. Appl. Phys., vol. 36, no. 9A, pp. 5393-5408, 1997.
4. 0.9N vertical cavity surface emitting laser," Jpn. J. Appl. Phys., vol. 37, no. 12A pp. L1424-L1426, 1998.
5. M. A. Khan, M. S. Shur, J. N. Mmohammad, A. E. Botchkarev, and H. Morkoc, "Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C," Appl. Phys. Lett., vol. 66, no. 9, pp. 1083-1085, 1995.
6. R. W. Chuang, A. Q. Zou, H. P. Lee, Z. J. Dong, F. F. Xiong, R. Shih, M. Bremser, and H. Juergensen, "Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor," MRS Internet J. Nitride Semicond. Res., 4S1. G6.42, 1999.
7. S. Nakamura, T. Mukai, M. Senoh, S. Nagahama, and N. Iwasa, "High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structure," Jpn. J. Appl. Phys., vol. 34, no. 7A, pp. L797-L868, 1995.
8. N. Eliashevich, J.-P. Debery, C. A. Tran, H. Venugopalan, and R. F. Karlicek, Jr., "GaAlP and InGaN light-emitting diodes: High-power performance and reliability," in Proc. SPIE Light-Emitting Diodes: Research, Manufacturing, and Applications IV, vol. 3938, 2000, pp. 44-51.
9. 0.92N by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 65, no. 1, pp. 593-595, 1994.
10. Y.-K. Song, H. Zhou, M. Diagne, A. V. Nurimikko, R. P. Schneider, Jr, C. P. Kuo, M. R. Krames, R. S. Kern, C. Carter-Coman, and F. A. Kish, "A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser," Appl. Phys. Lett., vol. 76, no. 13, pp. 1662-1664, 2000.
11. 0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition," Appl. Phys. Lett., vol. 73, no. 25, pp. 3556-3653, 1998.
12. T. Someya, R. Werner, A. Forchel, M. Catalano, and Y. Arakawa, "Room temperature lasing at blue wavelength in gallium nitride microcavities," Science, vol. 285, no. 17, pp. 1905-1906, 1999.
13. S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, and S. J. Son, "Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junction," Appl. Phys. Lett., vol. 78, no. 21, pp. 3265-3267, 2001.
14. S.-R. Jeon, C. S. Oh, J.-W. Yang, G. M. Yang, and B. S. You, "GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode," Appl. Phys. Lett., vol. 80, no. 11, pp. 1933-1935, 2002.