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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 2, 2011, Pages

Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar Inx Ga1-x N

(4) Nath, Digbijoy N a Gür, Emre a,b Ringel, Steven A a Rajan, Siddharth a

a The Ohio State University (United States)

b Fac of Arts and Sci Ataturk U (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

ACTIVE LAYER; ATOMIC FLUXES; ATOMIC SPECIES; COMPOSITION RANGES; COMPREHENSIVE MODEL; DEVICE APPLICATION; EXPERIMENTAL DATA; GAN FILM; GROWTH CONDITIONS; GROWTH MODELS; MULTI-QUANTUM WELL STRUCTURES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM-TEMPERATURE PHOTOLUMINESCENCE;

GROWTH KINETICS;

EID: 79953794164 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3562277 Document Type: Article

Times cited : (43)

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