AlGaAs/InGaAlP tunnel junctions for multi-junction solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1185-1188

  Sharps, P R ^a   Li, N Y ^a,c   Hills, J S ^a   Hou, H Q ^a   Chang, P C ^b,d   Baca, A ^b  

^a Emcore Photovoltaics   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Kingmax Optoelectronics Inc   (Taiwan)

^d AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM GALLIUM ARSENIDE; CARBON; ELECTRIC RESISTANCE; ENERGY GAP; GALLIUM; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SOLAR CELLS; TELLURIUM;

JUNCTION DEVICES; MEMORY EFFECTS; METAL-ORGANIC VAPOR PHASE EPITAXY; MULTI JUNCTION SOLAR CELLS; OPTICAL AND ELECTRICAL PROPERTIES; SERIES RESISTANCES; SIMS ANALYSIS; WORKING DEVICE;

TUNNEL JUNCTIONS;

EID: 84949552312     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916100     Document Type: Conference Paper

References (2)

1. S. M. Bedair, S. B. Phatak, and J. R. Hauser, IEEE Trans. ED-27, 822 (1980).
2. nd World Conference and Exhibition on Photovoltaic Energy Conversion, 3614 (1998).