Multi-layer sidewall WO X resistive memory suitable for 3D ReRAM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 153-154

  Chien, W C ^a   Lee, F M ^a   Lin, Y Y ^a   Lee, M H ^a   Chen, S H ^a   Hsieh, C C ^a   Lai, E K ^a   Hui, H H ^a   Huang, Y K ^a   Yu, C C ^a   Chen, C F ^a   Lung, H L ^a   Hsieh, K Y ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

PERFORMANCE DEGRADATION; PLANAR DEVICES; RESISTIVE MEMORIES;

TITANIUM NITRIDE;

THREE DIMENSIONAL COMPUTER GRAPHICS;

EID: 84866564550     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242507     Document Type: Conference Paper

References (5)

1. H. Tanaka, et al., VLSI Tech. Symp., pp. 14-15,2007
2. W.C. Chien, et al., IEDM, pp. 725-728, 2011
3. C.H. Ho, et al., IEDM, pp. 436-439, 2010
4. J.J Huang, et al., IEDM, pp. 733-736,2011
5. K. Gopalakrishnan, et al., VLSI Tech. Symp., pp. 205-206, 2010