Ag-assisted chemical etching of (100) and (111) n-type silicon substrates by varying the amount of deposited metal

Journal of the Electrochemical Society

Volumn 159, Issue 9, 2012, Pages

  Milazzo, R G ^a,b   D'Arrigo, G ^a   Spinella, C ^a   Grimaldi, M G ^a,b   Rimini, E ^a  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AG NANOPARTICLE; CHEMICAL ETCHING; DEPOSITED METAL; EXPERIMENTAL PARAMETERS; PREFERRED ORIENTATIONS; SILVER CLUSTER; SYSTEMATIC STUDY; VERTICAL DIRECTION;

DEPOSITS; ETCHING; NANOPARTICLES; NANOWIRES; SILICON; SILICON WAFERS;

SILVER;

EID: 84875510087     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/2.008209jes     Document Type: Article

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