Metal-assisted electrochemical etching of silicon

Nanotechnology

Volumn 21, Issue 46, 2010, Pages

  Huang, Z P ^a   Geyer, N ^b   Liu, L F ^b   Li, M Y ^a   Zhong, P ^a  

^a JIANGSU UNIVERSITY   (China)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CONTACT; ELECTROCHEMICAL MEASUREMENTS; FEATURE SIZES; METAL COVERAGES; SILICON NANOSTRUCTURES; SILICON SURFACES; VALENCE-BAND MAXIMUMS;

METALS;

ELECTROCHEMICAL ETCHING;

EID: 78650151774     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/46/465301     Document Type: Article

References (34)

1. Goldberger J, Hochbaum A I, Fan R and Yang P 2006 Silicon vertically integrated nanowire field effect transistors Nano Lett. 6 973-7 (Pubitemid 43836614)
2. Schmidt V, Riel H, Senz S, Karg S, Riess W and Gösele U 2006 Realization of a silicon nanowire vertical surround-gate field-effect transistor Small 2 85-8 (Pubitemid 43197999)
3. Tian B, Zheng X, Kempa T J, Fang Y, Yu N, Yu G, Huang J and Lieber C M 2007 Coaxial silicon nanowires as solar cells and nanoelectronic power sources Nature 449 885-90
4. Peng K Q, Xu Y, Wu Y, Yan Y J, Lee S T and Zhu J 2005 Aligned single-crystalline Si nanowire arrays for photovoltaic applications Small 1 1062-7 (Pubitemid 43951675)
5. Chan C K, Peng H, Liu G, McIlwrath K, Zhang X F, Huggins R A and Cui Y 2008 High-performance lithium battery anodes using silicon nanowires Nat. Nanotechnol. 3 31-5
6. Peng K, Jie J, Zhang W and Lee S T 2008 Silicon nanowires for rechargeable lithium-ion battery anodes Appl. Phys. Lett. 93 033105
7. Cui Y, Wei Q, Park H and Lieber C M 2001 Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species Science 293 1289-92 (Pubitemid 32777412)
8. Patolsky F, Zheng G and Lieber C M 2006 Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species Nat. Protoc. 1 1711-24 (Pubitemid 46773292)
9. Lehmann V and Föll H 1990 formation mechanism and properties of electrochemically etched trenches in n-type silicon J. Electrochem. Soc. 137 653-9 (Pubitemid 20646184)
10. Matthias S, Müller F, Jamois C, Wehrspohn R B and Gösele U 2004 Large-area three-dimensional structuring by electrochemical etching and lithography. Adv. Mater. 16 2166-70 (Pubitemid 40072917)
11. Peng K Q, Yan Y J, Gao S P and Zhu J 2002 Synthesis of large-area silicon nanowire arrays via self-assembling nanoelectrochemistry Adv. Mater. 14 1164-7 (Pubitemid 35009328)
12. Peng K Q, Wu Y, Fang H, Zhong X Y, Xu Y and Zhu J 2005 Uniform, axial-orientation alignment of one-dimensional single-crystal silicon nanostructure arrays Angew. Chem. Int. Edn 44 2737-42 (Pubitemid 40689575)
13. Birner A, Wehrspohn R B, Gösele U and Busch K 2001 Silicon-based photonic crystals Adv. Mater. 13 377-88 (Pubitemid 32327246)
14. Kleimann P, Badel X and Linnros J 2005 Toward the formation of three-dimensional nanostructures by electrochemical etching of silicon Appl. Phys. Lett. 86 183108
15. Huang Z P, Fang H and Zhu J 2007 Fabrication of silicon nanowire arrays with controlled diameter, length, and density Adv. Mater. 19 744-8 (Pubitemid 46932845)
16. Huang Z P, Zhang X X, Reiche M, Liu L F, Lee W, Shimizu T, Senz S and Gosele U 2008 Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching Nano Lett. 8 3046-51
17. Huang Z P, Shimizu T, Senz S, Zhang Z, Zhang X X, Lee W, Geyer N and Gosele U 2009 Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred (100) etching directions Nano Lett. 9 2519-25
18. Lehmann V 1993 The physics of macropore formation in low doped n-type silicon J. Electrochem. Soc. 140 2836-43
19. Lehmann V and Gosele U 1991 Porous silicon formation: a quantum wire effect Appl. Phys. Lett. 58 656-8
20. Peng K Q, Hu J J, Yan Y J, Wu Y, Fang H, Xu Y, Lee S T and Zhu J 2006 Fabrication of single-crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles Adv. Funct. Mater. 16 387-94 (Pubitemid 43213268)
21. Christophersen M, Carstensen J and Foll H 2000 Phys. Status Solidi a 182 45
22. Peng K Q, Zhang M L, Lu A J, Wong N B, Zhang R Q and Lee S T 2007 Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching Appl. Phys. Lett. 90 163123
23. Chen C Y, Wu C S, Chou C J and Yen T J 2008 Morphological control of single-crystalline silicon nanowire arrays near room temperature Adv. Mater. 20 3811-5
24. Fang H, Li X D, Song S, Xu Y and Zhu J 2008 Fabrication of slantingly-aligned silicon nanowire arrays for solar cell applications Nanotechnology 19 255703
25. Peng K, Lu A, Zhang R and Lee S T 2008 Motility of metal nanoparticles in silicon and induced anisotropic silicon etching Adv. Funct. Mater. 18 3026-35
26. Zhang M L, Peng K Q, Fan X, Jie J S, Zhang R Q, Lee S T and Wong N B 2008 Preparation of large-area uniform silicon nanowires arrays through metal-assisted chemical etching J. Phys. Chem. C 112 4444-50
27. Ponomarev E A and Levy-Clement C 1998 Macropore formation on p-type Si in fluoride containing organic electrolytes Electrochem. Solid State Lett. 1 42-5 (Pubitemid 128551939)
28. Lehmann V and Ronnebeck S 1999 The physics of macropore formation in low-doped p-type silicon J. Electrochem. Soc. 146 2968-75
29. Chen H A, Wang H, Zhang X H, Lee C S and Lee S T 2010 Wafer-scale synthesis of single-crystal zigzag silicon nanowire arrays with controlled turning angles Nano Lett. 10 864-8
30. Huang Z P, Shimizu T, Senz S, Zhang Z, Geyer N and Gosele U 2010 Oxidation rate effect on the direction of metal-assisted chemical and electrochemical etching of silicon J. Phys. Chem. C 111 10683-90
31. Morrison S R 1980 Electrochemistry at Semiconductor and Oxidized Metal Electrodes (New York: Plenum)
32. Tung R T 1992 Electron transport at metal-semiconductor interfaces: general theory Phys. Rev. B 45 13509-23
33. Rossi R C and Lewis N S 2001 Investigation of the size-scaling behavior of spatially nonuniform barrier height contacts to semiconductor surfaces using ordered nanometer-scale nickel arrays on silicon electrodes J. Phys. Chem. B 105 12303-18 (Pubitemid 35338334)
34. Barsoukov E and Macdonald J R 2005 Impedance Spectroscopy Theory, Experiment, and Applications (New York: Wiley)