Realization of vertical and zigzag single crystalline silicon nanowire architectures

Journal of Physical Chemistry C

Volumn 114, Issue 9, 2010, Pages 3798-3803

  Sivakov, V A ^a   Bronstrup G ^a   Pecz, B ^b   Berger, A ^a,c   Radnoczi, G Z ^b   Krause, M ^d   Christiansen, S H ^a,e  

^a LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^e MAX PLANCK INSTITUTE FOR THE SCIENCE OF LIGHT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTIONS; BULK MATERIALS; BULK SILICON; CHEMICAL SOLUTIONS; CRYSTALLOGRAPHIC ORIENTATIONS; ELECTROLESS DEPOSITION; ELECTRON BACK SCATTER DIFFRACTION; ETCH PROFILE; ETCHING SOLUTIONS; INTEGRATING SPHERES; OPTICAL CHARACTERISTICS; OPTO-ELECTRONICS; PHOTOVOLTAICS; SEM; SI (1 1 1); SI WAFER; SI(1 0 0); SILICON NANOWIRES; SILICON SURFACES; SILVER NANOPARTICLES; SILVER NITRATES; SINGLE CRYSTALLINE SILICON; SINGLE-CRYSTALLINE; TEM; TRANSMISSION ELECTRON; VISIBLE AND NEAR INFRARED; WET-CHEMICAL ETCHING;

ABSORPTION; CRYSTALLINE MATERIALS; DISSOLUTION; ELECTRON DIFFRACTION; HYDROFLUORIC ACID; HYDROGEN PEROXIDE; LIGHT; LIGHT REFLECTION; LIGHT TRANSMISSION; MORPHOLOGY; NANOPARTICLES; NANOWIRES; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON OXIDES; SILVER; WET ETCHING;

SILICON WAFERS;

EID: 77949291009     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp909946x     Document Type: Article

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