Silicon nanowires: Diameter dependence of growth rate and delay in growth

Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

  Dhalluin, F ^a   Baron, T ^a   Ferret, P ^b   Salem, B ^a   Gentile, P ^c   Harmand, J C ^d  

^a Joseph Fourier University   (France)

^b CEA LETI   (France)

^c CEA GRENOBLE   (France)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL DATA; GASEOUS PRECURSORS; GIBBS-THOMSON; GROWTH VELOCITY; INCUBATION TIME; SEMIEMPIRICAL MODELS; SI NANOWIRE; SILICON NANOWIRES; VAPOR-LIQUID-SOLID GROWTH;

GOLD COATINGS; GOLD DEPOSITS; THERMOELECTRICITY;

NANOWIRES;

EID: 77950467777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3373546     Document Type: Article

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