Effect of Al doping on microstructure and optical band gap of ZnO thin film synthesized by successive ion layer adsorption and reaction

Pramana - Journal of Physics

Volumn 80, Issue 2, 2013, Pages 315-326

  Mondal, S ^a   Bhattacharyya, S R ^b   Mitra, P ^a  

^a UNIVERSITY OF BURDWAN   (India)

^b SAHA INSTITUTE OF NUCLEAR PHYSICS   (India)

Author keywords

Al:ZnO thin films; Microstructure; Optical band gap; Particle size; Scanning electron microscopy; Successive ion layer absorption and reaction

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; AVERAGE PARTICLE SIZE; CHARACTERIZATION TECHNIQUES; ELECTRICAL RESISTANCES; ENERGY DISPERSIVE X-RAY; FUNDAMENTAL ABSORPTION EDGE; ION LAYERS; X-RAY LINE BROADENING;

ALUMINUM; ALUMINUM COATINGS; ENERGY GAP; METALLIC FILMS; MICROSTRUCTURE; OPTICAL BAND GAPS; PARTICLE SIZE; PARTICLE SIZE ANALYSIS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

OPTICAL FILMS;

EID: 84875471373     PISSN: 03044289     EISSN: None     Source Type: Journal    
DOI: 10.1007/s12043-012-0463-6     Document Type: Article

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