Properties of ZnO:Al films prepared by spin coating of aged precursor solution

Bulletin of the Korean Chemical Society

Volumn 31, Issue 1, 2010, Pages 112-115

  Shrestha, Shankar Prasad ^a   Ghimire, Rishi ^a   Nakarmi, Jeevan Jyoti ^a   Kim, Young Sung ^b   Shrestha, Sabita ^b   Park, Chong Yun ^b   Boo, Jin Hyo ^b  

^a TRIBHUVAN UNIVERSITY   (Nepal)

^b Sungkyunkwan University   (South Korea)

Author keywords

Al doped zinc oxide; Electrical properties; Optical properties; Sol Gel

Indexed keywords

AL DOPED; AL-CONCENTRATION; AL-DOPED ZINC OXIDE; ATOMIC PERCENT; CRYSTAL PLANES; DEPOSITED FILMS; DIETHANOLAMINE; DOPED ZNO; DOPING CONCENTRATION; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; GRAIN SIZE; HEXAGONAL WURTZITE STRUCTURE; HIGH TRANSMITTANCE; POLYCRYSTALLINE; PRECURSOR SOLUTIONS; PREFERENTIAL ORIENTATION; SCANNING ELECTRON MICROSCOPES; SEM IMAGE; SPIN COAT; UV VISIBLE SPECTROSCOPY; XRD; ZNO; ZNO:AL FILMS;

ALUMINUM; BIOACTIVITY; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CONDUCTIVE FILMS; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ETHANOL; GALVANOMAGNETIC EFFECTS; GELS; HALL MOBILITY; METALLIC FILMS; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOL-GELS; SOLS; SPIN DYNAMICS; SPIN GLASS; SUBSTRATES; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; ZINC; ZINC OXIDE; ZINC SULFIDE;

OPTICAL PROPERTIES;

EID: 77951823476     PISSN: 02532964     EISSN: 12295949     Source Type: Journal    
DOI: 10.5012/bkcs.2010.31.01.112     Document Type: Article

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