Manganese-doped ZnO nanobelts for spintronics

Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 783-785

  Ronning, C ^a,b   Gao, P X ^a   Ding, Y ^a   Wang, Z L ^a   Schwen, D ^b  

^a Georgia Institute of Technology   (United States)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS (DMS); NANOBELTS;

CRYSTAL LATTICES; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRIC CHARGE; FAST FOURIER TRANSFORMS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; OSCILLATIONS; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; SPUTTERING; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

MAGNETIC SEMICONDUCTORS;

EID: 1242331522     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1645319     Document Type: Article

References (16)

1. G. A. Prinz, Science 282, 1660 (1998).
2. J. K. Furdyna, J. Appl. Phys. 64, R29 (1988).
3. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
4. K. Ueda, H. Tabata, and T. Kawai, Appl, Phys. Lett. 79, 988 (2001).
5. Z. W. Pan, Z. R. Dai, and Z. L. Wang, Science 291, 1947 (2001).
6. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Ranges of Ions in Solids (Pergamon, New York, 1985). See also www.srim.org.
7. E. Sonder, R. A. Zuhr, and R. E. Valiga, J. Appl. Phys. 64, 1140 (1988).
8. S. O. Kucheyev, J. S. Williams, C. Jagadish, C. Evans, A. J. Nelson, and A. V. Hamza, Phys. Rev. B 67, 094 115 (2003).
9. S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, L. C. Chen, C. W. Hsu, H. M. Lin, and C. C. Chen, Appl. Phys. Lett. 82, 451 (2003).
10. D. P. Norton, S. J. Pearton, A. F. Hebard, N. Theodoropoulou, L. A. Boatner, and R. G. Wilson, Appl. Phys. Lett. 82, 239 (2003).
11. S. O. Kucheyev, C. Jagadish, J. S. Williams, P. N. K. Deenapanray, M. Yano, K. Koike, S. Sasa, M. Inoue, and K. Ogata, J. Appl. Phys. 93, 2972 (2003).
12. T. Monteiro, C. Boemare, M. J. Soares, E. Rita, and E. Alves, J. Appl. Phys. 93, 8995 (2003).
13. D. Kim, T. Terashita, I. Tanaka, and M. Nakayama, Jpn. J. Appl. Phys., Part 2 42, L935 (2003).
14. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996).
15. N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, Appl. Phys. Lett. 81, 622 (2002).
16. S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee, H. W. Shim, E. K. Suh, and C. J. Lee, Chem. Phys. Lett. 363, 134 (2002).