Dielectric breakdown - Recovery in logic and resistive switching in memory - Bridging the gap between the two phenomena

ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2012, Pages

  Pey, Kin Leong ^a   Raghavan, Nagarajan ^b   Wu, Xing ^a,b   Liu, Wenhu ^b   Bosman, Michel ^c  

^a SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT VOLTAGES; FUNDAMENTAL PHYSICS; MEMORY APPLICATIONS; NON-VOLATILE MEMORY; ORDERS OF MAGNITUDE; RESISTIVE SWITCHING; SWITCHING MECHANISM; TIME-DEPENDENT DIELECTRIC BREAKDOWN LIFETIMES;

DATA STORAGE EQUIPMENT; HAFNIUM OXIDES; RECOVERY; SWITCHING SYSTEMS;

ELECTRIC BREAKDOWN;

EID: 84874918517     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2012.6467690     Document Type: Conference Paper

References (24)

1. S. Lombardo, J. H. Stathis, B. P. Linder, K. L. Pey, F. Palumbo, and T. Chih Hang, "Dielectric breakdown mechanisms in gate oxides, " Journal of Applied Physics, vol. 98, pp. 121301-1, 2005.
2. J. Robertson, "High dielectric constant gate oxides for metal oxide Si transistors, " Reports on Progress in Physics, vol. 69, pp. 327-96, 2006.
3. W. H. Liu, K. L. Pey, X. Li, and M. Bosman, "Observation of Switching Behaviors in Post-Breakdown Conduction in NiSi-gated Stacks, " in 2009 IEEE International Electron Devices Meeting (IEDM 2009), 7-9 Dec. 2009, Piscataway, NJ, USA, 2009, p. 4 pp.
4. A. Crespo-Yepes, J. Martin-Martinez, R. Rodriguez, M. Nafria, X. Aymerich, and A. Rothschild, "Resistive switching-like behaviour of the dielectric breakdown in ultra-thin HF based gate stacks in MOSFETS, " in ESSDERC 2010-40th European Solid State Device Research Conference, 14-16 Sept. 2010, Piscataway, NJ, USA, 2010, pp. 138-41.
5. A. Crespo-Yepes, J. Martin-Martinez, A. Rothschild, R. Rodriguez, M. Nafria, and X. Aymerich, "Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High-k Gate Stacks, " IEEE Electron Device Letters, vol. 31, pp. 543-5, 2010.
6. T. Bearda, P. W. Mertens, M. M. Heyns, H. Wallinga, and P. Woerlee, "Breakdown and recovery of thin gate oxides, " Japanese Journal of Applied Physics, Part 2 (Letters), vol. 39, pp. 582-4, 2000.
7. J. Suñé, M. Nafría, and X. Aymerich, "Reversible dielectric breakdown of thin gate oxides in MOS devices, " Microelectronics Reliability, vol. 33, pp. 1031-1039, 1993.
8. L. Wei Yip, C. Byung Jin, J. Moon Sig, M. F. Li, D. S. H. Chan, S. Mathew, and D. L. Kwong, "Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation, " in IEEE International Electron Devices Meeting 2003, 8-10 Dec. 2003, Pisacataway, NJ, USA, 2003, pp. 38-3.
9. R. Ranjan, K. L. Pey, C. H. Tung, D. S. Ang, L. J. Tang, T. Kauerauf, R. Degraeve, G. Groeseneken, S. De Gendt, and L. K. Bera, "Failure defects observed in post-breakdown high-k/metal gate stack MOSFET, " in 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, March 26, 2006-March 30, 2006, San Jose, CA, United states, 2006, pp. 590-594.
10. X. Li, C. H. Tung, and K. L. Pey, "The nature of dielectric breakdown, " Applied Physics Letters, vol. 93, 2008.
11. J. Robertson and K. Tse, "Defects and their passivation in high K gate oxides, " Microelectronic Engineering, vol. 84, pp. 663-8, 2007.
12. J. Sune, E. Y. Wu, and S. Tous, "Modeling the breakdown statistics of gate dielectric stacks including percolation and progressive breakdown, " in 2010 IEEE International Electron Devices Meeting, IEDM 2010, December 6, 2010-December 8, 2010, San Francisco, CA, United states, 2010, pp. 4. 5. 1-4. 5. 4.
13. N. Raghavan, K. L. Pey, W. H. Liu, and X. Li, "New statistical model to decode the reliability and weibull slope of high-k and interfacial layer in a dual layer dielectric stack, " in 2010 IEEE International Reliability Physics Symposium, IRPS 2010, May 2, 2010-May 6, 2010, Garden Grove, CA, Canada, 2010, pp. 778-786.
14. S. Sahhaf, R. Degraeve, P. J. Roussel, B. Kaczer, T. Kauerauf, and G. Groeseneken, "A new TDDB reliability prediction methodology accounting for multiple SBD and wear out, " IEEE Transactions on Electron Devices, vol. 56, pp. 1424-32, 2009.
15. G Dearnaley, A. M. Stoneham and D. V. Morgan, "Electrical phenomena in amorphous oxide films " Rep. Prog. Phys., vol. 33, 1970.
16. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found, " Nature, vol. 453, pp. 80-3, 2008.
17. L. Sunghoon, N. Heedo, K. Jonggi, M. Jiwon, and S. Hyunchul, "Anion-Migration-Induced Bipolar Resistance Switching in Electrochemically Deposited TiOx Films, " Journal of the Electrochemical Society, vol. 158, pp. 88-92, 2011.
18. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices, " IEEE Transactions on Electron Devices, vol. 56, pp. 193-200, 2009.
19. R. Waser, R. Dittmann, C. Staikov, and K. Szot, "Redox-based resistive switching memories nanoionic mechanisms, prospects, and challenges, " Advanced Materials, vol. 21, pp. 2632-2663, 2009.
20. T. Yuan Heng, S. Wen Chao, H. Chia-En, L. Chrong Jung, and K. Ya-Chin, "Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis, " in 2010 IEEE International Electron Devices Meeting (IEDM 2010), 6-8 Dec. 2010, Piscataway, NJ, USA, 2010, p. 4 pp.
21. R. Degraeve, B. Kaczer, A. De Keersgieter, and G. Groeseneken, "Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications, " IEEE Transactions on Device and Materials Reliability, vol. 1, pp. 163-9, 2001.
22. K. L. Pey, N. Raghavan, X. Wu, W. H. Liu, X. Li, M. Bosman and T. Kauerauf, "Oxygen soluble gate electrodes for prolonged high-? gate stack reliability, " IEEE Electron Device Letters, vol. 32, pp. 252-254, 2011.
23. N. Raghavan, K. L. Pey, X. Wu, W. H. Liu, and M. Bosman, "Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching, " IEEE Electron Device Letters, vol. 33, pp. 712-714, May 2012.
24. X. Li, W. H. Liu, N. Raghavan, M. Bosman, and K. L. Pey, "Resistive switching in NiSi gate metal-oxide-semiconductor transistors, " Applied Physics Letters, vol. 97, p. 202904 (3 pp. ), 2010.