Resistive switching-like behaviour of the dielectric breakdown in ultra-thin hf based gate stacks in mosfets.

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 138-141

  Crespo Yepes, A ^a   Martin Martinez, J ^a   Rodriguez, R ^a   Nafria, M ^a   Aymerich, X ^a   Rothschild, A ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE PATHS; DIELECTRIC BREAKDOWNS; ELECTRICAL CHARACTERISTIC; GATE DIELECTRIC BREAKDOWN; GATE STACKS; HIGH-K DIELECTRIC; MOSFET CHANNELS; MOSFETS; RESISTIVE SWITCHING; ULTRA-THIN;

ELECTRIC BREAKDOWN; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; MOSFET DEVICES; SOLID STATE DEVICES; SWITCHING SYSTEMS;

LEAKAGE CURRENTS;

EID: 78649947923     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618448     Document Type: Conference Paper

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