Percolative model and thermodynamic analysis of oxygen-ion-mediated resistive switching

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 712-714

  Raghavan, Nagarajan ^a   Pey, Kin Leong ^a,b   Wu, Xing ^a,b   Liu, Wenhu ^a   Bosman, Michel ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Oxygen vacancy; Percolation model; Read voltage; Reliability; Resistive switching; Soft breakdown (SBD)

Indexed keywords

CONDUCTION STATE; CONDUCTIVE FILAMENTS; ELECTRICAL CHARACTERIZATION; HIGH-RESISTANCE STATE; ION TRANSPORTS; LOW-RESISTANCE STATE; PERCOLATION MODELS; RANDOMLY DISTRIBUTED; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; RETENTION LIFETIME; SOFT BREAKDOWN; THERMO DYNAMIC ANALYSIS; TRAP GENERATION RATE; ULTRATHIN GATE DIELECTRICS;

GATE DIELECTRICS; OXYGEN; PERCOLATION (SOLID STATE); RELIABILITY; SWITCHING SYSTEMS; THERMOANALYSIS; THERMODYNAMICS;

OXYGEN VACANCIES;

EID: 84862778084     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2187170     Document Type: Article

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