Modeling the breakdown statistics of gate dielectric stacks including percolation and progressive breakdown

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Sune J ^a   Wu, E Y ^b   Tous, S ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN SPOTS; FAILURE DISTRIBUTIONS; GATE DIELECTRIC STACKS; PERCOLATION EFFECTS; PROGRESSIVE BREAKDOWN;

ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); SOLVENTS;

DIELECTRIC MATERIALS;

EID: 79951826967     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703296     Document Type: Conference Paper

References (8)

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