Recovery of the mosfet and circuit functionality after the dielectric breakdown of ultrathin high-κ gate stacks

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 543-545

  Crespo Yepes, A ^a   Martin Martinez, J ^a   Rothschild, A ^b   Rodriguez, R ^a   Nafria, M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IMEC   (Belgium)

Author keywords

CMOS circuits; DB reversibility; Dielectric breakdown (DB); High ; Resistive switching

Indexed keywords

CIRCUIT FUNCTIONALITY; CIRCUIT SIMULATORS; CMOS CIRCUITS; DIELECTRIC BREAKDOWNS; DIELECTRIC RECOVERY; DIELECTRIC STACK; ELECTRICAL PERFORMANCE; GATE DIELECTRIC BREAKDOWN; GATE STACKS; MOS-FET; MOSFETS; RESISTIVE SWITCHING; ULTRA-THIN;

CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; DIGITAL INTEGRATED CIRCUITS; GATE DIELECTRICS; GATES (TRANSISTOR); SWITCHING SYSTEMS;

ELECTRIC BREAKDOWN;

EID: 77953024180     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2045732     Document Type: Article

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