New statistical model to decode the reliability and weibull slope of high-κ and interfacial layer in a dual layer dielectric stack

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 778-786

  Raghavan, N ^a   Pey, K L ^a   Liu, W H ^a   Li, X ^a,b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Cumulative damage model; Grain boundary; Interfacial layer; Poole Frenkel emission; Time dependent dielectric breakdown (TDDB); Weibull slope

Indexed keywords

CUMULATIVE DAMAGE MODELS; INTERFACIAL LAYER; POOLE-FRENKEL EMISSION; TIME DEPENDENT DIELECTRIC BREAKDOWN; WEIBULL SLOPE;

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC INSULATION TESTING; GATE DIELECTRICS; GATES (TRANSISTOR); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HAFNIUM; HAFNIUM OXIDES; LOGIC DEVICES; RELIABILITY; SILICON NITRIDE; SILICON OXIDES; STATISTICS;

DIELECTRIC MATERIALS;

EID: 77956178174     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488735     Document Type: Conference Paper

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