Oxygen-soluble gate electrodes for prolonged high-κ gate-stack reliability

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 252-254

  Raghavan, Nagarajan ^a   Pey, Kin Leong ^a,b   Wu, Xing ^a   Liu, Wenhu ^a   Li, Xiang ^c   Bosman, Michel ^c   Kauerauf, Thomas ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d IMEC   (Belgium)

Author keywords

Design for reliability (DFR); high (HK); oxygen vacancy; percolation; soft breakdown (SBD); solubility; time dependent dielectric breakdown (TDDB)

Indexed keywords

DESIGN FOR RELIABILITY; GATE ELECTRODES; GATE STACKS; METAL GATE ELECTRODES; N-CHANNEL; NEGATIVE BIAS; OXYGEN IONS; OXYGEN RESERVOIR; PERCOLATION; PERCOLATION PATH; RELIABILITY TOOLS; SELF-REPAIR; SOFT BREAKDOWN (SBD); TIME DEPENDENT DIELECTRIC BREAKDOWN; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRODES; LEAKAGE CURRENTS; OXYGEN; RELIABILITY; SOLUBILITY; SOLVENTS; THERMAL NOISE;

OXYGEN VACANCIES;

EID: 79951959814     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2099096     Document Type: Article

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