Anion-migration-induced bipolar resistance switching in electrochemically deposited TiOx films

Journal of the Electrochemical Society

Volumn 158, Issue 2, 2011, Pages

  Lee, Sunghoon ^a,b   Na, Heedo ^a   Kim, Jonggi ^a   Moon, Jiwon ^b   Sohn, Hyunchul ^a  

^a Yonsei University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STATE; ELECTROCHEMICAL DEPOSITION; OPERATION VOLTAGE; OXYGEN ANION; OXYGEN IONS; PT ELECTRODE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; TIO;

ELECTRODEPOSITION; ELECTROFORMING; FREE RADICALS; NEGATIVE IONS; OXYGEN; PLATINUM; REDUCTION; SWITCHING; SWITCHING SYSTEMS; TITANIUM NITRIDE;

ANNEALING;

EID: 78650725882     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3516464     Document Type: Article

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