Failure defects observed in post-breakdown high-k/metal gate stack MOSFET

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 590-594

  Ranjan, R ^a,b   Pey, K L ^a   Tung, C H ^b   Ang, D S ^a   Tang, L J ^b   Kauerauf, T ^c,d   Degraeve, R ^c   Groeseneken, G ^c,d   De Gendt, S ^c,d   Bera, L K ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Breakdown path; Dielectric breakdown induced epitaxy; Dielectric breakdown induced migration; Localized amorphization; Metal like filament; Metal high delamination

Indexed keywords

DEGRADATION RATES; DIELECTRIC BREAKDOWN INDUCED EPITAXY; DIELECTRIC BREAKDOWN INDUCED MIGRATION; LOCALIZED AMORPHIZATION;

DELAMINATION; FAILURE ANALYSIS; GATE DIELECTRICS; LEAKAGE CURRENTS; MOSFET DEVICES; POLYSILICON;

ELECTRIC BREAKDOWN;

EID: 34250785099     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251283     Document Type: Conference Paper

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