Inductively coupled plasma chemical vapour deposited AlO x/SiNy layer stacks for applications in high-efficiency industrial-type silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 112, Issue , 2013, Pages 196-201

  Dullweber, T ^a   Kranz, C ^a   Beier, B ^a   Veith, B ^a   Schmidt, J ^a,b   Roos, B F P ^c   Hohn, O ^c   Dippell, T ^c   Brendel, R ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c Singulus Technologies AG   (Germany)

Author keywords

AlOx; Aluminium oxide; Inductively coupled plasma; Rear passivation; Screen printing; Silicon solar cells

Indexed keywords

ALOX; ALUMINIUM OXIDE; BORON-DOPED; CHEMICAL VAPOURS; DEPOSITION METHODS; DEPOSITION PROCESS; DEPOSITION TECHNIQUE; HIGH DEPOSITION RATES; HIGH QUALITY; HIGH-EFFICIENCY; HIGH-THROUGHPUT; INDUCTIVELY COUPLED PLASMA (ICP); INTERFACE STATE DENSITY; INTERNAL QUANTUM EFFICIENCY; LAYER STACKS; METAL CONTACTS; NEGATIVE CHARGE; PASSIVATION LAYER; PERC SOLAR CELLS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITIONS (PECVD); REAR PASSIVATIONS; REAR SIDE; REAR SURFACES; SCREEN-PRINTED; SINGLE LAYER; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

CONVERSION EFFICIENCY; INDUCTIVELY COUPLED PLASMA; INDUSTRY; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCREEN PRINTING; SILICON NITRIDE; SILICON WAFERS; VAPORS;

SILICON SOLAR CELLS;

EID: 84874612608     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.01.036     Document Type: Article

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