Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition

Journal of the Electrochemical Society

Volumn 147, Issue 4, 2000, Pages 1481-1486

  Lee, J W ^a   Mackenzie, K D ^a   Johnson, D ^a   Sasserath, J N ^a   Pearton, S J ^b   Ren, F ^b  

^a Qualtx Technology Inc   (United States)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE OPERATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE; SILICA; SILICON NITRIDE; STRESSES;

CHAMBER PRESSURE; GAS CHEMISTRY; HIGH DENSITY PLASMA TECHNOLOGY; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION; RADIO FREQUENCY CHUCK POWER;

DIELECTRIC FILMS;

EID: 0033751202     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393382     Document Type: Article

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