Impurity-related limitations of next-generation industrial silicon solar cells

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 114-118

  Schmidt, Jan ^a   Lim, Bianca ^a   Walter, Dominic ^a   Bothe, Karsten ^a   Gatz, Sebastian ^a,c   Dullweber, Thorsten ^a   Altermatt, Pietro P ^b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c SolarWorld Innovations GmbH   (Germany)

Author keywords

Charge carrier lifetime; impurities; photovoltaic cells; semiconductor device modeling; silicon

Indexed keywords

BORON-OXYGEN; CELL EFFICIENCY; DEVICE SIMULATIONS; ELEVATED TEMPERATURE; METALLIC IMPURITY; N TYPE SILICON; RECOMBINATION CENTERS; SILICON MATERIALS;

BORON; CHARGE CARRIERS; EFFICIENCY; IMPURITIES; PHOTOVOLTAIC CELLS; SEMICONDUCTOR DEVICE MODELS; SILICON;

SILICON SOLAR CELLS;

EID: 84871726057     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2210030     Document Type: Article

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