Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells

Energy Procedia

Volumn 27, Issue , 2012, Pages 379-384

  Veith, B ^a   Dullweber, T ^a   Siebert, M ^a   Kranz, C ^a   Werner, F ^a   Harder, N P ^a,b   Schmidt, J ^a,b   Roos, B F P ^c   Dippell, T ^c   Brendel, R ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c Singulus Technologies AG   (Germany)

Author keywords

Aluminum oxide; Silicon; Solar Cells; Surface passivation

Indexed keywords

EID: 84897137824     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.07.080     Document Type: Conference Paper

References (10)

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