Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier

Journal of Alloys and Compounds

Volumn 552, Issue , 2013, Pages 423-429

  Afandiyeva, I M ^a   Demirezen, S ^b   Altindal, S ^b  

^a BAKU STATE UNIVERSITY   (Azerbaijan)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneities; Gaussian distribution; Intersection point; MS structures; PtSi n Si contacts

Indexed keywords

ALUMINUM; BIAS VOLTAGE; CURRENT VOLTAGE CHARACTERISTICS; DIODES; GAUSSIAN DISTRIBUTION; SEMICONDUCTOR DIODES; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

APPLIED BIAS VOLTAGE; BARRIER INHOMOGENEITIES; INCREASING TEMPERATURES; INTERSECTION POINTS; MAGNETRON SPUTTERING METHOD; RICHARDSON CONSTANT; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 84874074750     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.11.093     Document Type: Article

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