Electrical behaviour of Al/SiO 2 /Si structures with SiC nanocrystals

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 67-71

  Horvath Zs J ^a   Dozsa L ^a   Krafcsik, O H ^a   Mohacsy T ^a   Vida, Gy ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

Electrical behaviour; Epitaxy; MIS; Nanocrystals; SiC

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; SCHOTTKY BARRIER DIODES; SILICA; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRICAL BEHAVIORS; NANOCRYSTALS; SIC;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 3342959925     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.067     Document Type: Conference Paper

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