The distribution of the barrier height in Al-TiW-Pd2Si/n-Si Schottky diodes from I-V-T measurements

Semiconductor Science and Technology

Volumn 23, Issue 3, 2008, Pages

  Dökme, Ilbilge ^a   Altindal, Şmsettin ^b   Afandiyeva, Izzet M ^c  

^a AHI EVRAN UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

^c BAKU STATE UNIVERSITY   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION; TEMPERATURE MEASUREMENT; THERMIONIC EMISSION;

BARRIER HEIGHTS; SCHOTTKY BARRIER INHOMOGENEITIES; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 42549135067     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/3/035003     Document Type: Article

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