The effect of hydrogen-induced interface traps on a titanium dioxide-based palladium gate MOS capacitor (Pd-MOSC): A conductance study

Microelectronics Journal

Volumn 29, Issue 7, 1998, Pages 445-450

  Dwivedi, D ^a   Dwivedi, R ^a   Srivastava, S K ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; EVAPORATION; GATES (TRANSISTOR); HYDROGEN; PALLADIUM; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; TITANIUM DIOXIDE;

CONDUCTANCE GATE VOLTAGE RESPONSE; HYDROGEN GAS CONCENTRATION; INTERFACE STATE DENSITY; INTERFACE TRAPS; SIGNAL FREQUENCY;

MOS CAPACITORS;

EID: 0032117864     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(97)00096-7     Document Type: Article

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