Microstructural studies by transmission electron microscopy of the formation of ultrathin PtSi layers with novel silicidation processes

Journal of Materials Research

Volumn 14, Issue 6, 1999, Pages 2577-2587

  Jin, S ^a   Bender, H ^a   Donaton, R A ^a   Maex, K ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRON BEAMS; EPITAXIAL GROWTH; ETCHING; EVAPORATION; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SELECTIVE ETCHING; SILICIDATION;

ULTRATHIN FILMS;

EID: 0032673878     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0345     Document Type: Article

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