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Volumn 51, Issue 8, 2007, Pages 1096-1100
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The obtaining of Al-Ti10W90-Si(n) Schottky diodes and investigation of their interface surface states density
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Author keywords
Barrier unhomogeneity; Schottky barrier; Surface states; Technology of Schottky diodes
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Indexed keywords
ALUMINUM;
CURRENT VOLTAGE CHARACTERISTICS;
ENERGY GAP;
INTERFACES (MATERIALS);
MAGNETRON SPUTTERING;
MICROSTRUCTURE;
CURRENT TRANSFER;
DIODE MATRIX;
SEMICONDUCTOR INTERFACES;
SURFACE STATES DENSITY;
X-RAY METHOD;
SCHOTTKY BARRIER DIODES;
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EID: 34547674529
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sse.2007.05.021 Document Type: Article |
Times cited : (10)
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References (18)
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