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Volumn 51, Issue 8, 2007, Pages 1096-1100

The obtaining of Al-Ti10W90-Si(n) Schottky diodes and investigation of their interface surface states density

Author keywords

Barrier unhomogeneity; Schottky barrier; Surface states; Technology of Schottky diodes

Indexed keywords

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; MICROSTRUCTURE;

EID: 34547674529     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.05.021     Document Type: Article
Times cited : (10)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.