The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/n-Si structure using I-V, C-V and G/ω-V measurements

Microelectronic Engineering

Volumn 85, Issue 2, 2008, Pages 365-370

  Afandiyeva, I M ^a   Dökme, I ^b   Altindal, Ş ^c   Abdullayeva, L K ^a   Askerov, Sh G ^a  

^a BAKU STATE UNIVERSITY   (Azerbaijan)

^b AHI EVRAN UNIVERSITY   (Turkey)

^c GAZI UNIVERSITY   (Turkey)

Author keywords

Frequency dependent; Interface states; MS structure; Pd2Si n Si contacts; Series resistance

Indexed keywords

PALLADIUM;

CAPACITANCE-VOLTAGE (C-V); ELECTRICAL CHARACTERISTICS; REVERSE BIASES;

ALUMINUM;

EID: 47049130903     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.07.010     Document Type: Article

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